H9435S mosfet equivalent, p-channel enhancement-mode mosfet.
* RDS(on)=60mΩ@VGS=-10V, ID=-5.3A
* RDS(on)=90mΩ@VGS=-4.5V, ID=-4.2A
* Advanced Trench Process Technology
* High Density Cell Design for Ultra Low On-Resi.
or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or.
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